Invention Grant
- Patent Title: FinFETs with contact-all-around
- Patent Title (中): FinFET与触点全能
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Application No.: US14250763Application Date: 2014-04-11
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Publication No.: US09406804B2Publication Date: 2016-08-02
- Inventor: Yu-Lien Huang , Tung Ying Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/12 ; H01L29/66 ; H01L21/306 ; H01L21/311
Abstract:
An integrated circuit structure includes a semiconductor substrate, a semiconductor fin over the semiconductor substrate, a gate stack on a top surface and a sidewall of the semiconductor fin, a source/drain region on a side of the gate stack, and a contact plug encircling a portion of the source/drain region.
Public/Granted literature
- US20150295089A1 FINFETS WITH CONTACT-ALL-AROUND Public/Granted day:2015-10-15
Information query
IPC分类:
