Invention Grant
- Patent Title: Vertically oriented semiconductor device and shielding structure thereof
- Patent Title (中): 垂直取向的半导体器件及其屏蔽结构
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Application No.: US14461631Application Date: 2014-08-18
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Publication No.: US09406604B2Publication Date: 2016-08-02
- Inventor: Hsiu-Ying Cho
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L23/58 ; H01L29/66 ; H01L31/0203 ; H01L23/522 ; H01L27/01 ; H01L49/02 ; H01F27/28 ; H01L21/02 ; H01L21/20
Abstract:
The present disclosure involves a semiconductor device. The semiconductor device includes a substrate; a capacitor disposed over the substrate; an inductor disposed over the substrate and having a coil feature surrounding the capacitor; and a shielding structure over the substrate and configured around the coil feature.
Public/Granted literature
- US20140353798A1 Vertically Oriented Semiconductor Device and Shielding Structure Thereof Public/Granted day:2014-12-04
Information query
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