Invention Grant
- Patent Title: Latch circuit and latch circuit array including the same
- Patent Title (中): 锁存电路和锁存电路阵列包括相同的
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Application No.: US14680852Application Date: 2015-04-07
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Publication No.: US09406356B2Publication Date: 2016-08-02
- Inventor: Chang-Hyun Kim , Hyun-Gyu Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0174711 20141208
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A latch circuit may include first to fourth storage nodes; first to fourth transistor pairs, each including a PMOS transistor and an NMOS transistor connected in series through a corresponding one of the first to fourth storage nodes, wherein each of the first to fourth storage nodes is connected to a gate of an NMOS transistor of a transistor pair in a previous stage and a gate of a PMOS transistor of a transistor pair in a next stage; a first connection unit suitable for connecting a data bus with a Kth storage node of the first to fourth storage nodes when read and write operations are performed, wherein K is an integer from 1 to 4; and second connection units suitable for connecting the data bus with one or more of the first to fourth storage nodes, except for the Kth storage node, when the write operation is performed.
Public/Granted literature
- US20160163360A1 LATCH CIRCUIT AND LATCH CIRCUIT ARRAY INCLUDING THE SAME Public/Granted day:2016-06-09
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