Invention Grant
- Patent Title: Nitride semiconductor light-emitting diode
- Patent Title (中): 氮化物半导体发光二极管
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Application No.: US14830713Application Date: 2015-08-19
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Publication No.: US09385275B2Publication Date: 2016-07-05
- Inventor: Atsushi Yamada , Akira Inoue
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-079114 20140408
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/24 ; H01L33/20 ; H01L33/38 ; H01L33/16 ; H01L33/32
Abstract:
In a nitride semiconductor light-emitting diode having a shape of an isosceles triangle in a top view, either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied: 20 degrees≦Angle degree α≦40 degrees (Ia) and 0 degrees≦Angle degree θ≦40 degrees (IIa) Group Aa: 90 degrees≦Angle degree α≦130 degrees (Ib) and 50 degrees≦Angle degree θ≦90 degrees (IIb). Group Ab:
Public/Granted literature
- US20150357522A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE Public/Granted day:2015-12-10
Information query
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