Invention Grant
- Patent Title: Differential MOSCAP device
- Patent Title (中): 差分MOSCAP器件
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Application No.: US14594201Application Date: 2015-01-12
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Publication No.: US09385246B2Publication Date: 2016-07-05
- Inventor: Hsiao-Tsung Yen , Yu-Ling Lin , Chin-Wei Kuo , Min-Chie Jeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L23/522 ; H01L49/02

Abstract:
A differential MOS capacitor includes a first plurality of upper capacitor plates, a second plurality of upper capacitor plates, and a conductive plate. At least two of the second plurality of upper capacitor plates are spaced laterally from each other and are disposed laterally between at least two of the first plurality of upper capacitor plates. The conductive plate is configured to serve as a common bottom capacitor plate such that a first capacitor is formed by the first plurality of upper capacitor plates and the conductive plate and a second capacitor is formed by the second plurality of upper capacitor plates and the conductive plate.
Public/Granted literature
- US20150123244A1 DIFFERENTIAL MOSCAP DEVICE Public/Granted day:2015-05-07
Information query
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