Invention Grant
US09385241B2 Electrostatic discharge (ESD) protection circuits, integrated circuits, systems, and methods for forming the ESD protection circuits
有权
静电放电（ESD）保护电路，集成电路，系统和形成ESD保护电路的方法
- Patent Title: Electrostatic discharge (ESD) protection circuits, integrated circuits, systems, and methods for forming the ESD protection circuits
- Patent Title (中): 静电放电（ESD）保护电路，集成电路，系统和形成ESD保护电路的方法
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Application No.: US12766186Application Date: 2010-04-23
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Publication No.: US09385241B2Publication Date: 2016-07-05
- Inventor: Shu-Chuan Lee , Kuo-Ji Chen , Wade Ma
- Applicant: Shu-Chuan Lee , Kuo-Ji Chen , Wade Ma
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L29/861 ; H01L27/02 ; H01L29/16 ; H01L29/20
Abstract:
An electrostatic discharge (ESD) protection circuit coupled with an input/output (I/O) pad is provided. The ESD protection circuit includes a first field oxide device coupled between a first terminal that is capable of providing a first supply voltage and the I/O pad. The first field oxide device includes a drain end having a first type of dopant and a source end having the first type of dopant. The first field oxide device includes a first doped region having a second type of dopant disposed adjacent to the drain end of the first field oxide device and a second doped region having the second type of dopant disposed adjacent to the source end of the first field oxide device.
Public/Granted literature
Information query
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