Invention Grant
- Patent Title: Fin shaped semiconductor device structures having tipped end shape and method for fabricating the same
- Patent Title (中): 具有尖端形状的鳍状半导体器件结构及其制造方法
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Application No.: US14748240Application Date: 2015-06-24
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Publication No.: US09385236B1Publication Date: 2016-07-05
- Inventor: Chien-Ying Sun , En-Chiuan Liou , Ming-Shing Chen , Yu-Cheng Tung , Chih-Wei Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510273696 20150526
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L21/8234 ; H01L27/088 ; G06F17/50
Abstract:
A semiconductor device and a method of forming the same, the semiconductor device includes a plurality of fin shaped structures and a dummy gate structure. The fin shaped structures are disposed in a substrate, where at least one of the fin shaped structures has a tipped end. The dummy gate structure is disposed on the substrate, and includes an extending portion covering the tipped end.
Information query
IPC分类:
