Invention Grant
US09385235B2 Fin field effect transistor (FinFET) device and method for forming the same
有权
Fin场效应晶体管（FinFET）器件及其形成方法
- Patent Title: Fin field effect transistor (FinFET) device and method for forming the same
- Patent Title (中): Fin场效应晶体管（FinFET）器件及其形成方法
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Application No.: US14291899Application Date: 2014-05-30
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Publication No.: US09385235B2Publication Date: 2016-07-05
- Inventor: Huang-Kui Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/78 ; H01L29/423 ; H01L29/417 ; H01L29/06 ; H01L29/10 ; H01L29/49 ; H01L21/28 ; H01L21/3213 ; H01L29/66
Abstract:
A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and a fin structure extending above the substrate. The FinFET structure also includes a gate electrode formed over the fin structure, and the gate electrode has a grid-like pattern when seen from a top-view.
Public/Granted literature
- US20150349125A1 FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2015-12-03
Information query
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