Invention Grant
- Patent Title: Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
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Application No.: US14027873Application Date: 2013-09-16
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Publication No.: US09385227B2Publication Date: 2016-07-05
- Inventor: Mohamed N. Darwish , Jun Zeng
- Applicant: MaxPower Semiconductor, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: MaxPower Semiconductor, Inc.
- Current Assignee: MaxPower Semiconductor, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Groover & Associates PLLC
- Agent Robert Groover; Gwendolyn Groover
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78

Abstract:
Lateral power devices where immobile electrostatic charge is emplaced in dielectric material adjoining the drift region. A shield gate is interposed between the gate electrode and the drain, to reduce the Miller charge. In some embodiments the gate electrode is a trench gate, and in such cases the shield electrode too is preferably vertically extended.
Public/Granted literature
- US20150076593A1 POWER DEVICES, STRUCTURES, COMPONENTS, AND METHODS USING LATERAL DRIFT, FIXED NET CHARGE, AND SHIELD Public/Granted day:2015-03-19
Information query
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