Invention Grant
- Patent Title: Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same
- Patent Title (中): 具有超结金属氧化物半导体结构的半导体器件及其制造方法
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Application No.: US14320671Application Date: 2014-07-01
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Publication No.: US09385217B2Publication Date: 2016-07-05
- Inventor: Toshio Nakajima
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2008-223370 20080901
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/10 ; H01L29/32 ; H01L21/263
Abstract:
A semiconductor device includes: a first base layer; a drain layer disposed on the back side surface of the first base layer; a second base layer formed on the surface of the first base layer; a source layer formed on the surface of the second base layer; a gate insulating film disposed on the surface of both the source layer and the second base layer; a gate electrode disposed on the gate insulating film; a column layer formed in the first base layer of the lower part of both the second base layer and the source layer by opposing the drain layer; a drain electrode disposed in the drain layer; and a source electrode disposed on both the source layer and the second base layer, wherein heavy particle irradiation is performed to the column layer to form a trap level locally.
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