Invention Grant
- Patent Title: Semiconductor device having a patterned gate dielectric
- Patent Title (中): 具有图案化栅极电介质的半导体器件
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Application No.: US14577044Application Date: 2014-12-19
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Publication No.: US09385202B2Publication Date: 2016-07-05
- Inventor: Marian Kuruc , Juraj Vavro
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Kevin B. Jackson
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/66 ; H01L29/739 ; H01L29/08 ; H01L29/74 ; H01L29/78
Abstract:
In one embodiment, a semiconductor device includes an isolated trench-electrode structure. The semiconductor device is formed using a modified photolithographic process to produce alternating regions of thick and thin dielectric layers that separate the trench electrode from regions of the semiconductor device. The thin dielectric layers can be configured to control the formation channel regions, and the thick dielectric layers can be configured to reduce switching losses.
Public/Granted literature
- US20150102403A1 SEMICONDUCTOR DEVICE HAVING A PATTERNED GATE DIELECTRIC Public/Granted day:2015-04-16
Information query
IPC分类:
