Invention Grant
US09385196B2 Fast switching IGBT with embedded emitter shorting contacts and method for making same
有权
具有嵌入式发射极短路触点的快速开关IGBT及其制造方法
- Patent Title: Fast switching IGBT with embedded emitter shorting contacts and method for making same
- Patent Title (中): 具有嵌入式发射极短路触点的快速开关IGBT及其制造方法
-
Application No.: US13611653Application Date: 2012-09-12
-
Publication No.: US09385196B2Publication Date: 2016-07-05
- Inventor: Jacek Korec , John Manning Savidge Neilson , Sameer Pendharkar
- Applicant: Jacek Korec , John Manning Savidge Neilson , Sameer Pendharkar
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L21/331 ; H01L29/08 ; H01L29/66
Abstract:
Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or gown epitaxial silicon for controlled drift region thickness and fast switching speed.
Public/Granted literature
- US20140070265A1 FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND METHOD FOR MAKING SAME Public/Granted day:2014-03-13
Information query
IPC分类:
