Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13357764Application Date: 2012-01-25
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Publication No.: US09385130B2Publication Date: 2016-07-05
- Inventor: Yoichi Fukushima
- Applicant: Yoichi Fukushima
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2011-016488 20110128
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/768
Abstract:
In order to achieve the reduction of contact resistance by forming a metal silicide layer with a sufficient thickness in an interface between a polycrystalline silicon plug and an upper conductive plug, the polycrystalline silicon plug contains germanium, which is ion-implanted before forming the metal silicide layer.
Public/Granted literature
- US20120193696A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-08-02
Information query
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