Invention Grant
- Patent Title: Semiconductor device and method
- Patent Title (中): 半导体器件及方法
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Application No.: US14463288Application Date: 2014-08-19
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Publication No.: US09385110B2Publication Date: 2016-07-05
- Inventor: Chao-Yang Yeh , Ming-Tsun Lin , Hau Tao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/16 ; H01L25/00 ; H01L21/768 ; H01L25/065 ; H01L23/538 ; H01L23/31

Abstract:
A link device with a large density routing is attached to a package in order to provide a high-density interconnect pathway to interconnect semiconductor devices. In an embodiment the package is an integrated fan out package. The link device may be bonded on either side of the package, and the package may optionally comprise through package vias. The link device may also be an integrated passive device that includes resistors, inductor, and capacitor components.
Public/Granted literature
- US20150371951A1 Semiconductor Device and Method Public/Granted day:2015-12-24
Information query
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