Invention Grant
- Patent Title: Semiconductor devices
- Patent Title (中): 半导体器件
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Application No.: US14370971Application Date: 2013-01-10
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Publication No.: US09385105B2Publication Date: 2016-07-05
- Inventor: Thorsten Meyer , Gerald Ofner , Bernd Waidhas , Hans-Joachim Barth , Sven Albers , Reinhard Golly , Philipp Riess , Bernd Ebersberger
- Applicant: INTEL DEUTSCHLAND GMBH
- Applicant Address: DE Neubiberg
- Assignee: Intel Deutschland GmbH
- Current Assignee: Intel Deutschland GmbH
- Current Assignee Address: DE Neubiberg
- International Application: PCT/EP2013/050398 WO 20130110
- International Announcement: WO2013/104712 WO 20130718
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L25/065 ; H01L25/16 ; H01L23/538 ; H01L23/498 ; H01L23/31 ; H01L21/56

Abstract:
A semiconductor device includes: a chip having at least one electrically conductive contact at a first side of the chip; an extension layer extending laterally from one or more sides of the chip; a redistribution layer on a surface of the extension layer and the first side, and coupled to the contact; an interposer having at least one electrically conductive contact at a first surface of the interposer and coupled to the redistribution layer, and at least one electrically conductive contact at a second surface of the interposer opposite to the first surface; a molding material at least partially enclosing the chip and the redistribution layer, and in contact with the interposer. Another semiconductor device includes: an interposer; a redistribution layer over the interposer; a circuit having first and second circuit portions, wherein the redistribution layer includes the first circuit portion, and the interposer includes the second circuit portion.
Public/Granted literature
- US20150028478A1 SEMICONDUCTOR DEVICES Public/Granted day:2015-01-29
Information query
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