Invention Grant
US09385076B2 Semiconductor device with bump structure on an interconncet structure
有权
具有互连结构的凸起结构的半导体器件
- Patent Title: Semiconductor device with bump structure on an interconncet structure
- Patent Title (中): 具有互连结构的凸起结构的半导体器件
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Application No.: US13313677Application Date: 2011-12-07
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Publication No.: US09385076B2Publication Date: 2016-07-05
- Inventor: Hsien-Wei Chen , Yi-Wen Wu , Wen-Hsiung Lu
- Applicant: Hsien-Wei Chen , Yi-Wen Wu , Wen-Hsiung Lu
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/60 ; H01L23/00 ; H01L23/31
Abstract:
A semiconductor device includes a post-passivation interconnect (PPI) structure having a landing pad region. A polymer layer is formed on the PPI structure and patterned with a first opening and a second opening to expose portions of the landing pad region. The second opening is a ring-shaped opening surrounding the first opening. A bump structure is formed on the polymer layer to electrically connect the landing pad region through the first opening and the second opening.
Public/Granted literature
- US20130147031A1 SEMICONDUCTOR DEVICE WITH BUMP STRUCTURE ON POST-PASSIVATION INTERCONNCET Public/Granted day:2013-06-13
Information query
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