Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14183870Application Date: 2014-02-19
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Publication No.: US09385040B2Publication Date: 2016-07-05
- Inventor: Tsai-Tsung Tsai , Wen-Hsiung Lu , Yu-Peng Tsai , Wei-Hung Lin , Ming-Da Cheng , Chung-Shi Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agent Chun-Ming Shih
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/683 ; H01L23/00 ; H01L23/544
Abstract:
A method of manufacturing a semiconductor device includes providing a wafer, grinding a backside of the wafer, disposing a backside film on the backside of the wafer, cutting the wafer to singulate a plurality of dies from the wafer, and forming a mark on the backside film disposed on each of the plurality of dies by a laser operation.
Public/Granted literature
- US20150235902A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2015-08-20
Information query
IPC分类:
