Invention Grant
- Patent Title: Carbonization of metal caps
- Patent Title (中): 金属盖碳化
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Application No.: US11786367Application Date: 2007-04-11
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Publication No.: US09385034B2Publication Date: 2016-07-05
- Inventor: Hui-Lin Chang , Ting-Yu Shen , Yung-Cheng Lu
- Applicant: Hui-Lin Chang , Ting-Yu Shen , Yung-Cheng Lu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/768
Abstract:
An integrated circuit structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; a conductive wiring in the dielectric layer; and a metal carbide cap layer over the conductive wiring.
Public/Granted literature
- US20080251928A1 Carbonization of metal caps Public/Granted day:2008-10-16
Information query
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