Invention Grant
US09385013B2 Method and apparatus of manufacturing a semiconductor device by forming a film on a substrate
有权
通过在基板上形成膜来制造半导体器件的方法和装置
- Patent Title: Method and apparatus of manufacturing a semiconductor device by forming a film on a substrate
- Patent Title (中): 通过在基板上形成膜来制造半导体器件的方法和装置
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Application No.: US15011896Application Date: 2016-02-01
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Publication No.: US09385013B2Publication Date: 2016-07-05
- Inventor: Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
- Applicant: Hitachi-Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2008-300891 20081126; JP2009-246707 20091027
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/318 ; H01L21/314 ; H01L21/67 ; C23C16/50 ; C23C16/455 ; C23C16/52 ; C23C16/46 ; C23C16/02

Abstract:
Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: (a) forming a discontinuous first layer including the first element and having a thickness of less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.
Public/Granted literature
- US20160148824A1 Method and Apparatus of Manufacturing a Semiconductor Device by Forming a Film on a Substrate Public/Granted day:2016-05-26
Information query
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