Invention Grant
- Patent Title: Carbon layer and method of manufacture
- Patent Title (中): 碳层及其制造方法
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Application No.: US14834081Application Date: 2015-08-24
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Publication No.: US09384991B2Publication Date: 2016-07-05
- Inventor: Mark van Dal
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/285 ; H01L21/02 ; H01L29/16 ; H01L29/423 ; H01L29/786 ; H01L21/324 ; H01L29/40
Abstract:
A system and method for manufacturing a carbon layer is provided. An embodiment comprises depositing a first metal layer on a substrate, the substrate comprising carbon. A silicide is eptiaxially grown on the substrate, the epitaxially growing the silicide also forming a layer of carbon over the silicide. In an embodiment the carbon layer is graphene, and may be transferred to a semiconductor substrate for further processing to form a channel within the graphene.
Public/Granted literature
- US20150364329A1 Carbon Layer and Method of Manufacture Public/Granted day:2015-12-17
Information query
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