Invention Grant
- Patent Title: Apparatus and method for a high precision voltage reference
- Patent Title (中): 高精度电压基准的装置和方法
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Application No.: US14608494Application Date: 2015-01-29
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Publication No.: US09383764B1Publication Date: 2016-07-05
- Inventor: Susumu Tanimoto
- Applicant: Dialog Semiconductor (UK) Limited
- Applicant Address: GB Reading
- Assignee: Dialog Semiconductor (UK) Limited
- Current Assignee: Dialog Semiconductor (UK) Limited
- Current Assignee Address: GB Reading
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G05F3/26
- IPC: G05F3/26

Abstract:
An apparatus and method for a voltage reference circuit with improved precision. The voltage reference circuit utilizes threshold voltage difference between a pair of MOSFETs. A voltage reference circuit between a power supply node and a ground node and configured for generating a reference voltage, includes a first current mirror with a first NMOS transistor and a second NMOS transistor wherein said first NMOS transistor threshold voltage is not equal to said second NMOS transistor threshold voltage, a second current mirror with a first PMOS transistor, a second and third PMOS transistor configured to be coupled to said power supply node, a current source configured to be provide current to said second current mirror, an amplifier configured with a first and second input configured to be connected to the drains of said first NMOS transistor and said second NMOS transistor and, a feedback loop configured to be the output of said amplifier.
Information query
IPC分类: