Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14790072Application Date: 2015-07-02
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Publication No.: US09382893B2Publication Date: 2016-07-05
- Inventor: Hiroshi Nakamura , Shigemi Miyazawa , Hideki Miura
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2014-157690 20140801
- Main IPC: F02P3/04
- IPC: F02P3/04 ; F02P3/055 ; H03K17/16 ; F02P3/045 ; H03K17/082

Abstract:
Aspects of the invention include a semiconductor device that includes a voltage-controlled type semiconductor element connected to a primary side of an ignition coil for supplying a voltage to an ignition device of an internal combustion engine, a first resistor and a second resistor inserted in series in a supplying path of an input signal for controlling a gate of the voltage-controlled type semiconductor element and a current control circuit including a current limiting circuit for controlling current flowing through the voltage-controlled type semiconductor element. Aspects of the invention also include a first by-pass forming element that is connected in parallel to the second resistor and by-passes the second resistor in a turning ON process of the voltage-controlled type semiconductor element, and a second by-pass forming element that is connected in parallel to the first resistor and the second resistor.
Public/Granted literature
- US20160032883A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-04
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