A film formation method controls with accuracy the thickness of a thin film formed on a film formation object. The film formation method includes a film formation step of heating a film formation source and forming a film on a film formation object while moving the film formation source and monitoring an amount of released vapors of the film forming material using a quartz oscillator for measurement, a control step of adjusting a heating temperature of the film formation source based on the monitored value of the quartz oscillator for measurement, and a calibration step of calibrating the monitored value of the quartz oscillator for measurement, using a quartz oscillator for calibration and the quartz oscillator for measurement. The calibration step is performed in a middle of the film formation step, after movement of the film formation source is started from a waiting position.