Invention Grant
US09381056B2 Plasma treatment and plasma enhanced chemical vapor deposition onto temperature sensitive biological materials
有权
等离子体处理和等离子体增强化学气相沉积到温度敏感生物材料上
- Patent Title: Plasma treatment and plasma enhanced chemical vapor deposition onto temperature sensitive biological materials
- Patent Title (中): 等离子体处理和等离子体增强化学气相沉积到温度敏感生物材料上
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Application No.: US14553552Application Date: 2014-11-25
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Publication No.: US09381056B2Publication Date: 2016-07-05
- Inventor: David Staack , Tsung-Chan Tsai
- Applicant: The Texas A&M University System
- Applicant Address: US TX College Station
- Assignee: The Texas A&M University System
- Current Assignee: The Texas A&M University System
- Current Assignee Address: US TX College Station
- Agency: Winstead PC
- Main IPC: A61M37/00
- IPC: A61M37/00 ; A61B18/04 ; A61L2/14 ; B05D1/00 ; C23C16/06 ; C23C16/503 ; C23C16/52
Abstract:
A method and apparatus for depositing a film on a biological substrate are provided. A plasma generation device includes a dielectric conduit and a high voltage electrode. The plasma generation device is placed in proximity to the biological substrate and a gas supply that includes a precursor material is directed through the dielectric conduit. An electric field generated by the potential difference between the high voltage electrode and the biological substrate ionizes at least a portion of the gas supply and causes plasma to emanate from the dielectric conduit and contact the biological substrate. The plasma induces a reaction of the precursor material to form a film that is deposited on the biological substrate.
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