Invention Grant
- Patent Title: GaN-based quantum dot visible laser
- Patent Title (中): GaN基量子点可见激光器
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Application No.: US13721930Application Date: 2012-12-20
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Publication No.: US09362719B2Publication Date: 2016-06-07
- Inventor: Pallab Bhattacharya , Meng Zhang
- Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Applicant Address: US MI Ann Arbor
- Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
- Current Assignee Address: US MI Ann Arbor
- Agency: Marshall, Gerstein & Borun LLP
- Main IPC: H01S5/343
- IPC: H01S5/343 ; H01S5/30 ; H01S5/34 ; B82Y20/00 ; B82Y40/00 ; H01S5/02 ; H01S5/028 ; H01S5/20 ; H01S5/32

Abstract:
A III-nitride based quantum dot (QD) laser is formed of InGaN/GaN quantum dots and capable emitting at a single wavelength within the visible region, including the violet wavelength region (400-440 nm), the blue wavelength region (440-490 nm), the green wavelength region (490-570 nm), the yellow wavelength region (570-590 nm), the orange wavelength region (590-620 nm), and the red wavelength region (620-700 nm), with varying composition as described.
Public/Granted literature
- US20130259079A1 GaN-Based Quantum Dot Visible Laser Public/Granted day:2013-10-03
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