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US09362419B2 Variable resistance device having parallel structure 有权
具有并联结构的可变电阻装置

  • Patent Title: Variable resistance device having parallel structure
  • Patent Title (中): 具有并联结构的可变电阻装置
  • Application No.: US14057919
    Application Date: 2013-10-18
  • Publication No.: US09362419B2
    Publication Date: 2016-06-07
  • Inventor: Hyung Jin Park
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Icheon
  • Assignee: SK HYNIX INC.
  • Current Assignee: SK HYNIX INC.
  • Current Assignee Address: KR Icheon
  • Priority: KR10-2013-0050526 20130506
  • Main IPC: H01L29/8605
  • IPC: H01L29/8605 ;  H01L29/66 ;  H01L49/02
Variable resistance device having parallel structure
Abstract:
A variable resistance device includes a parallel structure. The variable resistance device is formed using a silicon (Si) substrate. In the variable resistance device, a conductive line arranged in a current direction is formed over an impurity region, and a resistance value of the resistance device is precisely adjusted by adjusting a level of a voltage applied to the conductive line. The variable resistance device includes a first impurity region formed in a substrate, a second impurity region formed in the substrate and arranged parallel to the first impurity region, a conductive line formed over the first impurity region, and electrode terminals formed at both longitudinal ends of the second impurity region to be coupled to the second impurity region.
Abstract(Chinese):

可变电阻装置包括并联结构。 可变电阻器件使用硅（Si）衬底形成。 在可变电阻器件中，在杂质区域上形成沿电流方向布置的导电线，并且通过调节施加到导线的电压的电平来精确地调节电阻器件的电阻值。 可变电阻器件包括形成在衬底中的第一杂质区域，形成在衬底中并与第一杂质区平行布置的第二杂质区，形成在第一杂质区上的导线，以及形成在第一杂质区两端的电极端 要耦合到第二杂质区的第二杂质区。

Public/Granted literature
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Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/86 ..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/8605 ...带有PN结的电阻器
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