Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14733557Application Date: 2015-06-08
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Publication No.: US09362401B2Publication Date: 2016-06-07
- Inventor: Toshiyuki Takewaki , Hironobu Miyamoto
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-176460 20130828
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L29/78 ; H01L27/088 ; H01L29/40 ; H01L29/423 ; H01L29/778 ; H01L29/20 ; H01L27/02 ; H01L27/06 ; H01L29/47 ; H01L29/66 ; H01L29/417 ; H01L29/49
Abstract:
A semiconductor device includes a substrate, a buffer layer provided on the substrate, a channel layer provided on the buffer layer, an electron supply layer provided on the channel layer, a first contact hole provided on the electron supply layer, a source electrode that is formed within the first contact hole, and electrically connected to the electron supply layer, a second contact hole provided on the electron supply layer, a drain electrode that is formed within the second contact hole, and electrically connected to the electron supply layer, a gate electrode provided between the source electrode and the drain electrode, a second insulating film that is formed to cover the gate electrode, a strain relaxation film that is formed over the second insulating film above the gate electrode, a third insulating film that is formed to cover the source electrode, the drain electrode, and the strain relaxation film, and an organic film that is formed over the third insulating film.
Public/Granted literature
- US20150270394A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-09-24
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