A method of producing a controllable semiconductor component includes providing a semiconductor body with a top side and a bottom side, and forming a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body. The first trench has a first width and a first depth, and the second trench has a second width greater than the first width and a second depth greater than the first depth. The method further includes forming, in a common process, an oxide layer in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench, and removing the oxide layer from the first trench completely or at least partly such that the semiconductor body comprises an exposed first surface area arranged in the first trench.