Invention Grant
- Patent Title: Transfer-free batch fabrication of single layer graphene devices
- Patent Title (中): 单层石墨烯器件的无转移批量制造
-
Application No.: US13384663Application Date: 2010-07-21
-
Publication No.: US09362364B2Publication Date: 2016-06-07
- Inventor: Jiwoong Park , Carlos Ruiz-Vargas , Mark Philip Levendorf , Lola Brown
- Applicant: Jiwoong Park , Carlos Ruiz-Vargas , Mark Philip Levendorf , Lola Brown
- Applicant Address: US NY Ithaca
- Assignee: CORNELL UNIVERSITY
- Current Assignee: CORNELL UNIVERSITY
- Current Assignee Address: US NY Ithaca
- Agency: Bond, Schoeneck & King, PLLC
- Agent William Greener; Alek P. Szecsy
- International Application: PCT/US2010/042702 WO 20100721
- International Announcement: WO2011/046655 WO 20110421
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/16 ; H01L21/8258 ; H01L27/12 ; H01L29/417 ; H01L29/778 ; H01L29/786
Abstract:
A method of manufacturing one or more graphene devices is disclosed. A thin film growth substrate is formed directly on a device substrate. Graphene is formed on the thin film growth substrate. A transistor is also disclosed, having a device substrate and a source supported by the device substrate. The transistor also has a drain separated from the source and supported by the device substrate. The transistor further has a single layer graphene (SLG) channel grown partially on and coupling the source and the drain. The transistor also has a gate aligned with the SLG channel, and a gate insulator between the gate and the SLG channel. Integrated circuits and other apparati having a device substrate, a thin film growth substrate formed directly on at least a portion of the device substrate, and graphene formed directly on at least a portion of the thin film growth substrate are also disclosed.
Public/Granted literature
- US20120168724A1 TRANSFER-FREE BATCH FABRICATION OF SINGLE LAYER GRAPHENE DEVICES Public/Granted day:2012-07-05
Information query
IPC分类:
