Invention Grant
- Patent Title: Spatial semiconductor structure
- Patent Title (中): 空间半导体结构
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Application No.: US14792638Application Date: 2015-07-07
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Publication No.: US09362358B2Publication Date: 2016-06-07
- Inventor: Hung-Lin Shih , Chih-Chien Liu , Jei-Ming Chen , Wen-Yi Teng , Chieh-Wen Lo
- Applicant: UNITED MICROELECTRONICS CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORPORATION
- Current Assignee: UNITED MICROELECTRONICS CORPORATION
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L21/308 ; H01L29/66 ; H01L21/8238
Abstract:
A method of fabricating a spatial semiconductor structure includes steps as follows. Firstly, a semiconductor substrate is provided. Then, a first mask layer is formed above the semiconductor substrate. Then, at least a first opening is formed in the first mask layer and exposes a portion of a surface of the semiconductor substrate. Then, a first semiconductor pattern is formed in the first opening. Then, a second mask layer is formed over the first semiconductor pattern and the first mask layer. Then, at least a second opening is formed through the second mask layer to the first mask layer and exposes another portion of the surface of the semiconductor substrate. And, a second semiconductor pattern is formed in the second opening.
Public/Granted literature
- US20150311284A1 SPATIAL SEMICONDUCTOR STRUCTURE Public/Granted day:2015-10-29
Information query
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