Invention Grant
US09362308B2 Semiconductor device having finFET structures and method of making same
有权
具有finFET结构的半导体器件及其制造方法
- Patent Title: Semiconductor device having finFET structures and method of making same
- Patent Title (中): 具有finFET结构的半导体器件及其制造方法
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Application No.: US14204371Application Date: 2014-03-11
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Publication No.: US09362308B2Publication Date: 2016-06-07
- Inventor: Toshiharu Nagumo
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/78 ; H01L21/84
Abstract:
A semiconductor device and method making it comprises pFETs with an SiGe channel and nFETs with an Si channel, formed on an SOI substrate. Improved uniformity of fin height and width is attained by forming the fins additively by depositing an SiGe layer on the SOI substrate and forming first fins from the superposed SiGe layer and underlying thin Si film of the SOI substrate. Second fins of Si can then be formed by replacing the upper SiGe portions of selected first fins with Si.
Public/Granted literature
- US20140252483A1 SEMICONDUCTOR DEVICE HAVING FINFET STRUCTURES AND METHOD OF MAKING SAME Public/Granted day:2014-09-11
Information query
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