Invention Grant
- Patent Title: Method for fabricating pipe gate nonvolatile memory device
- Patent Title (中): 制造管闸非易失性存储装置的方法
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Application No.: US14563733Application Date: 2014-12-08
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Publication No.: US09362301B2Publication Date: 2016-06-07
- Inventor: Ki-Hong Lee , Kwon Hong , Dae-Gyu Shin
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0051427 20100531
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L21/339 ; H01L21/8239 ; H01L27/115 ; H01L21/822 ; H01L21/28 ; H01L29/66 ; H01L29/792 ; H01L21/311 ; H01L21/768
Abstract:
A nonvolatile memory device includes a pipe insulation layer having a pipe channel hole, a pipe gate disposed over the pipe insulation layer, a pair of cell strings each having a columnar cell channel, and a pipe channel coupling the columnar cell channels and surrounding inner sidewalls and a bottom of the pipe channel hole.
Public/Granted literature
- US20150093866A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-04-02
Information query
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