Invention Grant
US09362269B2 Resistor and metal-insulator-metal capacitor structure and method
有权
电阻和金属 - 绝缘体 - 金属电容器的结构和方法
- Patent Title: Resistor and metal-insulator-metal capacitor structure and method
- Patent Title (中): 电阻和金属 - 绝缘体 - 金属电容器的结构和方法
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Application No.: US13797315Application Date: 2013-03-12
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Publication No.: US09362269B2Publication Date: 2016-06-07
- Inventor: Chih-Fu Chang , Jen-Pan Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L27/06 ; H01L49/02

Abstract:
A passive circuit device incorporating a resistor and a capacitor and a method of forming the circuit device are disclosed. In an exemplary embodiment, the circuit device comprises a substrate and a passive device disposed on the substrate. The passive device includes a bottom plate disposed over the substrate, a top plate disposed over the bottom plate, a spacing dielectric disposed between the bottom plate and the top plate, a first contact and a second contact electrically coupled to the top plate, and a third contact electrically coupled to the bottom plate. The passive device is configured to provide a target capacitance and a first target resistance. The passive device may also include a second top plate disposed over the bottom plate and configured to provide a second target resistance, such that the second target resistance is different from the first target resistance.
Public/Granted literature
- US20140264750A1 Resistor and Metal-Insulator-Metal Capacitor Structure and Method Public/Granted day:2014-09-18
Information query
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