Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US14851696Application Date: 2015-09-11
-
Publication No.: US09362263B2Publication Date: 2016-06-07
- Inventor: Shintaro Yamamichi , Kenta Ogawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2013-119998 20130606
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L23/34 ; H01L23/48 ; H01L21/44 ; H01L25/18 ; H01L23/498 ; H01L23/31 ; H01L23/50 ; H01L25/065 ; H01L25/00 ; H01L21/56 ; H01L23/12 ; H01L23/00

Abstract:
This invention can reduce heat that is generated in a first semiconductor chip and transfers to a second semiconductor chip through through-silicon vias. The first semiconductor chip has the first through-silicon vias. Each of the first through-silicon vias is arranged on any of grid points arranged in m rows and n columns (m>n). The first semiconductor chip also has a first circuit formation area. A first circuit is formed in the first circuit formation area. The first circuit performs signal processing while communicating with the second semiconductor chip. In plan view, the first circuit formation area does not overlap with a through-silicon via area that is defined by coupling the outermost grid points arranged in m rows and n columns. In plan view, some of connection terminals are located between the first circuit formation area and the through-silicon via area.
Public/Granted literature
- US20160005727A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-01-07
Information query
IPC分类: