The purpose of the present invention is to reduce the wiring inductance of a power semiconductor module. It comprises a first power semiconductor device, a second power semiconductor device, a first conductor unit which is opposed to the first power semi conductor device, a second conductor unit which is opposed to the first conductor unit across the first power semiconductor device, a third conductor unit which is opposed to the second power semiconductor device, a fourth conductor unit which is opposed to the third conductor unit across the second power semiconductor device, a first intermediate conductor unit which extends from the first conductor unit, a second intermediate conductor unit which extends from the fourth conductor unit and, a positive electrode side first terminal, and a positive electrode side second terminal which project from the first intermediate conductor unit, and a negative electrode side first terminal and a negative electrode side second terminal which project from the second intermediate conductor unit. The negative electrode side first terminal is arranged in a position adjacent to the positive electrode side first terminal. The negative electrode side second terminal is arranged in a position adjacent to the positive electrode side second terminal.