Invention Grant
US09362188B2 TSV scan cell comparator coupled to voltage reference and response
有权
TSV扫描单元比较器耦合到电压参考和响应
- Patent Title: TSV scan cell comparator coupled to voltage reference and response
- Patent Title (中): TSV扫描单元比较器耦合到电压参考和响应
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Application No.: US14734682Application Date: 2015-06-09
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Publication No.: US09362188B2Publication Date: 2016-06-07
- Inventor: Lee D. Whetsel
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Lawrence J. Bassuk; Frank D. Cimino
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26 ; H01L23/58 ; H01L21/66 ; G01R31/3185 ; H01L23/538 ; G01R31/28 ; H01L23/48

Abstract:
An integrated circuit die includes a substrate of semiconductor material having a top surface, a bottom surface, and an opening through the substrate between the top surface and the bottom surface. A through silicon via (TSV) has a conductive body in the opening, has a top contact point coupled to the body at the top surface, and has a bottom contact point coupled to the body at the bottom surface. A scan cell has a serial input, a serial output, control inputs, a voltage reference input, a response input coupled to one of the contact points, and a stimulus output coupled to the other one of the contact points.
Public/Granted literature
- US20150270185A1 TSV TESTING METHOD AND APPARATUS Public/Granted day:2015-09-24
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