Invention Grant
- Patent Title: Uniformity in wafer patterning using feedback control
-
Application No.: US14735657Application Date: 2015-06-10
-
Publication No.: US09362185B2Publication Date: 2016-06-07
- Inventor: Chung-Hsi Wu , Han-Wen Liao , Chih-Yu Lin , Cherng-Chang Tsuei
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/02 ; H01L21/3213 ; H01L21/683 ; H01L21/3065
Abstract:
A method for patterning a wafer includes performing a first patterning on a wafer, and after performing the first patterning, calculating a simulated dose mapper (DoMa) map predicting a change in critical dimensions of the wafer due to performing a second patterning on the wafer. The method further includes performing the second patterning on the wafer. Performing the second patterning includes adjusting one or more etching parameters of the second patterning in accordance with differences between the simulated DoMa map and desired critical dimensions of the wafer.
Public/Granted literature
- US20150279750A1 Uniformity in Wafer Patterning using Feedback Control Public/Granted day:2015-10-01
Information query
IPC分类:
