Hybrid interconnect scheme and methods for forming the same

Invention Grant

US09362164B2 Hybrid interconnect scheme and methods for forming the same 有权

Title translation: 混合互连方案及其形成方法

Please log in to see more content

Patent Title: Hybrid interconnect scheme and methods for forming the same
Patent Title (中): 混合互连方案及其形成方法
Application No.: US14229306

Application Date: 2014-03-28
Publication No.: US09362164B2

Publication Date: 2016-06-07
Inventor: Chen-Hua Yu , Tien-I Bao
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater Matsil, LLP
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/768 ; H01L23/532

Hybrid interconnect scheme and methods for forming the same

Abstract:

A device includes a first low-k dielectric layer, and a copper-containing via in the first low-k dielectric layer. The device further includes a second low-k dielectric layer over the first low-k dielectric layer, and an aluminum-containing metal line over and electrically coupled to the copper-containing via. The aluminum-containing metal line is in the second low-k dielectric layer.

Abstract(Chinese):

器件包括第一低k电介质层和第一低k电介质层中的含铜通孔。该器件还包括位于第一低k电介质层上的第二低k电介质层和在含铜通孔上电耦合的含铝金属线。含铝金属线在第二低k电介质层中。

Public/Granted literature

US20140213051A1 Hybrid Interconnect Scheme and Methods for Forming the Same Public/Granted day:2014-07-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）