Invention Grant
- Patent Title: Semiconductor apparatus and method for producing the same
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Application No.: US13776107Application Date: 2013-02-25
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Publication No.: US09362145B2Publication Date: 2016-06-07
- Inventor: Toshio Shiobara , Susumu Sekiguchi , Hideki Akiba
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2012-56202 20120313
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/56 ; H01L23/29 ; H01L23/00 ; H01L23/31

Abstract:
A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, includes: an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200° C., and arranging on the other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted; an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no semiconductor device is mounted by molding a thermosetting resin with the mold on which the substrates are arranged; and a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus.
Public/Granted literature
- US09401290B2 Semiconductor apparatus and method for producing the same Public/Granted day:2016-07-26
Information query
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