Invention Grant
- Patent Title: Fast atomic layer etch process using an electron beam
- Patent Title (中): 使用电子束的快速原子层蚀刻工艺
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Application No.: US14505168Application Date: 2014-10-02
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Publication No.: US09362131B2Publication Date: 2016-06-07
- Inventor: Ankur Agarwal , Shahid Rauf , Kartik Ramaswamy
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/306 ; H01L21/311 ; H01L21/3213 ; B81C1/00
Abstract:
An etch process gas is provided to a main process chamber having an electron beam plasma source, and during periodic passivation operations a remote plasma source provides passivation species to the main process chamber while ion energy is limited below an etch ion energy threshold. During periodic etch operations, flow from the remote plasma source is halted and ion energy is set above the etch threshold.
Public/Granted literature
- US20160064231A1 FAST ATOMIC LAYER ETCH PROCESS USING AN ELECTRON BEAM Public/Granted day:2016-03-03
Information query
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