Invention Grant
- Patent Title: Structure and method for integrated devices on different substartes with interfacial engineering
- Patent Title (中): 用于界面工程的不同子系统上集成器件的结构和方法
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Application No.: US13725330Application Date: 2012-12-21
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Publication No.: US09362123B2Publication Date: 2016-06-07
- Inventor: Liang-Gi Yao , I-Ming Chang , Yasutoshi Okuno , Chih-Hao Chang , Shou Zen Chang , Clement Hsingjen Wann
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/78 ; H01L27/12 ; H01L21/28 ; H01L29/66 ; H01L29/10 ; H01L21/02 ; H01L29/51
Abstract:
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first semiconductor material and a first reactivity; and a low reactivity capping layer of disposed on the semiconductor substrate, wherein the low reactivity capping layer includes a second semiconductor material and a second reactivity less than the first reactivity, the low reactivity capping layer includes silicon germanium Si1-xGex and x is less than about 30%.
Public/Granted literature
- US20140175513A1 Structure And Method For Integrated Devices On Different Substartes With Interfacial Engineering Public/Granted day:2014-06-26
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