Process for contact doping

Invention Grant

US09362122B2 Process for contact doping 有权

Title translation: 接触掺杂方法

Patent Title: Process for contact doping
Patent Title (中): 接触掺杂方法
Application No.: US14004797

Application Date: 2012-04-05
Publication No.: US09362122B2

Publication Date: 2016-06-07
Inventor: Roie Yerushalmi , Ori Pinchas-Hazut
Applicant: Roie Yerushalmi , Ori Pinchas-Hazut
Applicant Address: IL Jerusalem
Assignee: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
Current Assignee: YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
Current Assignee Address: IL Jerusalem
Agency: Vorys, Sater, Seymour and Pease LLP
International Application: PCT/IL2012/050130 WO 20120405
International Announcement: WO2012/137211 WO 20121011
Main IPC: H01L21/22
IPC: H01L21/22 ; H01L21/225 ; H01L21/228 ; H01L29/06

Abstract:

Provided is a process for modifying the chemical composition of a surface region of a material, employing rapid thermal processing (RTP) conditions.

Abstract(Chinese):

提供了使用快速热处理（RTP）条件来改变材料的表面区域的化学组成的方法。

Public/Granted literature

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/22	....杂质材料的扩散，例如在半导体或半导体的交界区掺入或析出掺杂材料，电极材料；杂质材料的再分配，例如，不引入或去除过多的掺杂剂