Invention Grant
- Patent Title: Inferring threshold voltage distributions associated with memory cells via interpolation
- Patent Title (中): 通过插值推导与存储单元相关的阈值电压分布
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Application No.: US14474500Application Date: 2014-09-02
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Publication No.: US09361996B2Publication Date: 2016-06-07
- Inventor: Zhenlei Shen , William H. Radke
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34 ; G11C11/56 ; G11C16/10

Abstract:
Apparatuses and methods for inferring threshold voltage distributions associated with memory cells via interpolation are described herein. An example includes determining soft data for a group of memory cells each programmed to one of a number of data states, wherein the soft data comprises a number of different soft data values, determining a quantity of memory cells associated with each of the different soft data values, and inferring at least a portion of a threshold voltage distribution associated with the group of memory cells via an interpolation process using the determined quantities of memory cells associated with each of the different soft data values.
Public/Granted literature
- US20150023110A1 INFERRING THRESHOLD VOLTAGE DISTRIBUTIONS ASSOCIATED WITH MEMORY CELLS VIA INTERPOLATION Public/Granted day:2015-01-22
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