A memory cell programming method for a rewritable non-volatile memory module is provided. The method includes grouping physical erasing units of the rewritable non-volatile memory module at least into a first area and a second area, wherein a first programming parameter set is configured initially for writing a first kind of data into the physical erasing units of the first area and the upper physical programming units of the physical erasing units of the first area are not written with data. The method also includes adjusting the first set of programming parameters to obtain a second programming parameter set, and applying the second set of programming parameters to write a second kind of data into the physical erasing units of the second area, wherein the upper physical programming units of the physical erasing units of the second area are not written with data.