Invention Grant
- Patent Title: Power semiconductor package with multi-section conductive carrier
- Patent Title (中): 功率半导体封装,带多段导电载体
-
Application No.: US14826103Application Date: 2015-08-13
-
Publication No.: US09331005B2Publication Date: 2016-05-03
- Inventor: Eung San Cho
- Applicant: International Rectifier Corporation
- Applicant Address: US CA El Segundo
- Assignee: Infineon Technologies Americas Corp.
- Current Assignee: Infineon Technologies Americas Corp.
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L25/07 ; H01L23/00 ; H01L23/31 ; H01L23/12 ; H01L21/48 ; H01L21/56 ; H01L25/11 ; H01L25/16 ; H01L23/492 ; H01L23/04

Abstract:
In one implementation, a power semiconductor package includes a non-contiguous, multi-section conductive carrier. A control transistor with a control transistor terminal is coupled to a first section of the multi-section conductive carrier, while a sync transistor with a sync transistor terminal is coupled to a second section of the multi-section conductive carrier. The first and second sections of the multi-section conductive carrier sink heat generated by the control and sync transistors. The first and second sections of the multi-section conductive carrier are electrically connected only through a mounting surface attached to the power semiconductor package. Another implementation of the power semiconductor package includes a driver IC coupled to a third section of the multi-section conductive carrier. A method for fabricating the power semiconductor package is also disclosed. The power semiconductor package according to the present disclosure results in effective thermal protection, current carrying capability, and a relatively small size.
Public/Granted literature
- US20150348884A1 Power Semiconductor Package with Multi-Section Conductive Carrier Public/Granted day:2015-12-03
Information query
IPC分类: