Invention Grant
US09330952B2 Bipolar mobile electrostatic carriers for wafer processing 有权
用于晶圆处理的双极移动静电载体

Bipolar mobile electrostatic carriers for wafer processing
Abstract:
In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer extending at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer extending at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions.
Public/Granted literature
Information query
Patent Agency Ranking
0/0