Invention Grant
US09330949B2 Heat treatment apparatus for heating substrate by irradiating substrate with flash of light
有权
用于通过用闪光照射基板来加热基板的热处理装置
- Patent Title: Heat treatment apparatus for heating substrate by irradiating substrate with flash of light
- Patent Title (中): 用于通过用闪光照射基板来加热基板的热处理装置
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Application No.: US13792419Application Date: 2013-03-11
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Publication No.: US09330949B2Publication Date: 2016-05-03
- Inventor: Kenichi Yokouchi , Hideo Nishihara
- Applicant: DAINIPPON SCREEN MFG. CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Ostrolenk Faber LLP
- Priority: JP2012-070624 20120327; JP2012-073840 20120328
- Main IPC: F26B19/00
- IPC: F26B19/00 ; A21B2/00 ; H01L21/67 ; H01L21/687

Abstract:
Three support members made of silicon carbide are provided fixedly on an inner periphery of the support ring. The support members are inclined at an angle in the range of 15 to 30 degrees with respect to a horizontal plane. With an outer peripheral edge of a semiconductor wafer supported by the three support members, a heating treatment is performed by irradiating the semiconductor wafer with halogen light from halogen lamps. Silicon carbide absorbs the halogen light better than quartz. The support members support the outer peripheral edge of the semiconductor wafer in point contacting relationship, so that the contact between a holder and the semiconductor wafer is minimized. This minimizes the disorder of the temperature distribution of the semiconductor wafer due to the support members to achieve the uniform heating of the semiconductor wafer.
Public/Granted literature
- US20130259457A1 HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH FLASH OF LIGHT Public/Granted day:2013-10-03
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