Invention Grant
- Patent Title: Method of treating substrate
- Patent Title (中): 底物处理方法
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Application No.: US11976872Application Date: 2007-10-29
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Publication No.: US09306118B2Publication Date: 2016-04-05
- Inventor: Chiung-Chi Tsai , Tzong-Liang Tsai
- Applicant: Chiung-Chi Tsai , Tzong-Liang Tsai
- Applicant Address: TW Taichung
- Assignee: HUGA OPTOTECH INC.
- Current Assignee: HUGA OPTOTECH INC.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe PC
- Priority: TW96119657A 20070601
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/22 ; H01L29/30 ; H01L21/304

Abstract:
A method of treating a substrate includes forming a plurality of nicks on an upper surface of the substrate by an electromagnetic wave without using a mask, wherein sidewalls of each nick have fusion formed thereon; roughening the sidewalls by removing the fusion; and forming an epitaxial multi-layer structure on the upper surface and the nicks. The roughened sidewalls of each nick comprise an average roughness equal to or larger than 1 nm.
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