Invention Grant
- Patent Title: Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier
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Application No.: US14559460Application Date: 2014-12-03
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Publication No.: US09306031B2Publication Date: 2016-04-05
- Inventor: Yuichi Minoura
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2010-194850 20100831
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/66 ; H01L21/74 ; H01L29/06 ; H01L29/20 ; H01L29/778 ; H01L29/207 ; H01L29/417
Abstract:
A compound semiconductor device includes a substrate having an opening formed from the rear side thereof; a compound semiconductor layer disposed over the surface of the substrate; a local p-type region in the compound semiconductor layer, partially exposed at the end of the substrate opening; and a rear electrode made of a conductive material, disposed in the substrate opening so as to be connected to the local p-type region.
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