Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the semiconductor device
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Application No.: US13910245Application Date: 2013-06-05
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Publication No.: US09281457B2Publication Date: 2016-03-08
- Inventor: Satoshi Shirahama
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2009-110785 20090430; JP2010-085124 20100401
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/00 ; H01L33/52 ; H01L23/495 ; H01L23/00 ; H01L33/62

Abstract:
Provided is a semiconductor device and a method of manufacturing the semiconductor device, in which the semiconductor device has a semiconductor element having a plurality of wires bonded to the semiconductor element with sufficient bonding reliability and has a good heat dissipation property. A semiconductor device in which a first wire is ball bonded on an electrode, and a second wire is further bonded on the ball-bonded first wire, and the first wire or an end of the second wire defines a space between itself and the ball portion of the first wire.
Public/Granted literature
- US20130267050A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2013-10-10
Information query
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